Gigadevice, a leading semiconductor company that specializes in flash memory, 32 -bit microcontrollers (MCU), sensors, analog products and solutions, announces the launch of its high -speed GD5F1GM9 Flash Nand flash, which presents innovative reading speeds and the innovative functionality of bad block management (BBM).
The GD5F1GM9 series combines North Flash’s high speed reading performance with the great capacity and profitability of Nand Flash. These innovations address the key challenges of the industry of slow response times and vulnerability to the bad interference of blockages associated with traditional flash nand. The launch of GD51GM9 will open new growth opportunities for Spi Nand Flash, which makes it the ideal option for fast boots applications in sectors such as Security, Industrial and IoT.
The high -speed QSPI Nand Flash GD5F1GM9 is based on a 24 Nm process node. The series admits 3V and 1.8V operational voltages, as well as high speed reading modes that include continuous reading, cache reading and next automatic load. Continuous reading and automatic load of the following page modes are newer reading characteristics added in this series, offering users versatile reading options to further accelerate the code and data obtaining. These reading modes use the new parallel calculation approach for ECC design (error correction code), replacing the previous series calculation method. This innovation significantly reduces the calculation time for the incorporated ECC.
The 3V version of the series achieves a continuous reading rate of up to 83 MB/s in continuous reading mode, which works at a maximum 166MHz clock frequency. The 1.8V version has a continuous reading rate of up to 66 MB/Sy supports a maximum 133MHz clock frequency. The results in the reading speeds of GD5F1GM9 are up to 3 times faster than traditional spi nand products at the same frequency. These design advantages improve data access performance, reduce system starting time and reduce the general energy consumption of the system.
As the bad blocks of the factory are inherent problems in Nand Flash, the GD5F1GM9 incorporates an advanced evil block management (BBM) in chip (BBM) to guarantee a comprehensive functionality of the continuous reading mode. Continuous reading allows reading access to the complete memory matrix with a unique reading command in the help of the executed BBM that links the block directions bad to good block addresses. Reading access will automatically omit the bad block due to the liaison access established to reasperation and a good linked physical block direction.
From the factory, the GD5F1GM9 series guarantees that the first 256 blocks are good blocks. While there will be bad blocks from the factory and new possible bad blocks may arise during the use that should be administered, the BBM function can create a logical block address to the physical block address link, allowing users to exchange and replace bad blocks and associated access will be in a good block once the BBM link is configured.
The device can admit up to 20 BBM links of the search table to complement the functionality of the continuous reading mode more. This not only significantly improves the use of resources, but also simplifies the design of the system.
“Currently, The Generally Slow Read Speed of Spi Nand Flash Has Become A Major Bottleneck In enhancing Boot Performance of Key Applications,” Said Ruwei su, Gigadevice Vice President and General Manager of Flash BU Nand Flash Sets A New Performance Benchmark in the Market.
The GD5F1GM9 series offers a 1 GB capacity with 3V/1.8V voltage options and admits WSON8 8×6 mm, WSON8 6×5 mm and BGA24 (5 × 5 matrix) 5 × 5 ball package options. For detailed information and product prices, communicate with your local sales representative.
For more details, visit: www.gigadevice.com
