The electric vehicle market continues to accumulate rhythm of strong volume growth of battery electric vehicles (BEV) and hybrid electric vehicles (PHEV). It is expected that the participation of the electric vehicles produced will see a two -digit growth by 2030 with a participation of around 45 percent compared to 20 percent in 2024. Infineon Technologies AG is responding to the growing demand for high -voltage automotive IgBT chips by launching a new generation of products. Among these offers are EDT3 (electric transmission train, 3RD Generation) Chips, designed for 400 V and 800 V systems, and RC-IGBT chips, specifically adapted for 800 V systems. These devices improve the performance of electrical transmission systems, which makes them particularly suitable for automotive applications.
EDT3 and RC-IGBT naked trochers have been designed to offer reliable and high quality performance, which allows customers to create custom power modules. The EDT3 of the New Generation represents a significant advance on EDT2, achieving total losses up to 20 percent lower than high loads while maintaining efficiency at low loads. This achievement is due to optimizations that minimize chips losses and increase the maximum binding temperature, balancing high load yield and low load efficiency. As a result, electric vehicles that use EDT3 chips achieve an extended range and reduce energy consumption, providing a more sustainable and profitable handling experience.
“Infineon, as leading IGBT technology provider, undertakes to offer outstanding performance and reliability,” says Robert Hermann, vice president of chips and discreet automotive voltage in Infineon Technologies. “Taking advantage of our firm dedication to innovation and decarbonization, our EDT3 solution allows our customers to obtain ideal results in their applications.”
EDT3 chips sets, which are available in 750 V and 1200 V classes, offer a high output current, which makes them very suitable for main investor applications in a wide range of electric vehicles, including battery electric vehicles, plug -in electric vehicles and extended range electric vehicles (Reevs). Its reduced chip size and optimized design facilitate the creation of smaller modules, which leads to lower general costs of the system. In addition, with a maximum virtual binding temperature of 185 ° C and a maximum collector collector emitter voltage rating of up to 750 V and 1200 V, these devices are suitable for high performance applications, which allows car manufacturers to design more efficient and reliable engines that can help extend the driving range and reduce emissions.
“Infineon, as the main provider and partner of IGBT chips in Leadrive, constantly provides us with innovative solutions that offer benefits at the system level,” he said Dr. Ing. Jie Shen, founder and general manager of Leadrive. “The last EDT3 chips have losses and distribution of optimized losses, admit higher operational temperatures and offer multiple metallization options. These features not only reduce the silicon area by amperio, but also accelerate the adoption of advanced packaging technologies.”
The 1200 V RC-IGBT raises the performance by integrating the functions of IGBT and diodes into a single die, delivering an even greater current density compared to the separate solutions of IGBT chipset and diodes. This advance translates into a system cost benefit, attributed to the increase in current density, the size of the scalable chip and the reduced assembly effort.
The latest IGBT IGBT chip technology of Infineon is now integrated into the automotive power module G2 Hybridpack Drive G2, offering better performance and capabilities in the module portfolio. This module offers a power range of up to 250 kW within the 750 V and 1200 V classes, a greater ease of use and new features, such as an integration option for next -generation phase current sensors and the temperature detection in chip, contributing to improvements in system costs.
All chip devices are offered with custom chip designs, including temperature sensors in chip and current. In addition, metalization options for sintering, welding and linking are available at order.
Availability New EDT3 and RC-IGBT devices are already available for sampling. There is more information available at www.infineon.com/edt3.
