Infineon Technologies AG has introduced the first Gallium Nituro Power (GAN) power transistors with integrated Schottky diode for industrial use. The products of products of G5 average voltage cool transistors with integrated Schottky diode increases the performance of energy systems by reducing unwanted dead time losses, further increasing the general efficiency of the system. In addition, the integrated solution simplifies the design of the power stage and reduces the cost of liquefaction.
In hard change applications, GAN -based topologies can incur higher power losses due to the highest effective body diode voltage (VSOUTH DAKOTA) of GAN devices. This worsens with long controller controllers, resulting in lower efficiency than the objective. Until now, energy design engineers often require an external Schottky diode in parallel with the GAN transistor or try to reduce dead times through their controllers. All of which is an additional effort, time and cost. The new G5 transistor of Infineon Coolgan significantly reduces these challenges by offering a GAN transistor with an integrated Schottky diode appropriate for use in IBC of server and telecommunications IBC, DC-DC converters, synchronous rectifiers for USB-C battery loaders, high-power PSU and automobile ducts.
“As gallium nitride technology becomes increasingly widespretad in power design, Infineon picks up the need for continuous improvement and enhancement to meet the evolving demands of customers”, Says Antoine Jalabert, Vice President of Infineon’s Medium-Voltage Gan Product Line, “The Coolgan Transistor G5 With Schottky Diode Exemplifies Infineon’s dedication to an accelerated innovation-to-customer approach to further pushes the limits of what is possible with broadband semiconductors materials. “
Inverse driving voltage of the GAN transistor (VRC) depends on the threshold voltage (VTh) and door bias outside the state (VGS) due to the lack of body diode. In addition, vTh of a GAN transistor is typically higher than the ignition voltage of a silicon diode that leads to a disadvantage during the reverse driving operation, also known as the third quadrant. Therefore, with this new Coolgan transistor, the inverse driving losses are lower, the compatibility with a broader range of high -side door controllers, and with the relaxed dead time, there is a broader controller compatibility that results in a simpler design.
The first of several GAN transistors with integrated Schottky diode is the 100 V 1.5 MΩ transistor in the 3 x 5 mm PQFN package.
Availability
Engineering samples and objective data sheet are available at order. Here there is more information about Integrated Coolgan Coolgan Transistors.
