Highlights:
- A photographic conversion element capable of responding to ultra high speeds of 20 picos -spots using light with 800 nm wavelengths, 10 times faster than photo detectors based on conventional semiconductors
- Concepted and developed by TDK, the magnetic device can detect near and visible infrared light
- Operation demonstrated successfully in collaboration with NIHON University in Japan, known for the research of fundamental physics
- It can be applied to photoelectronic conversion technology, which is expected to improve data processing speed and reduce energy consumption, both critics for a greater evolution of AI
TDK Corporation announces that it has developed the first “turning photographs detector” of the world, an element of photographic conversion that combines optical, electronic and magnetic elements that can respond at an ultra -high speed of 20 picosegundos (20 × 10⁻¹² s) using a wavelength of 800 nm, more than 10 times faster than semiconductors of conventional semiconductors. This new device is expected to be a key controller to implement the photoelectric conversion technology that increases data transmission and data processing speed, particularly in AI applications, while reducing energy consumption simultaneously.
Transferring amounts of mass data at higher speeds and with lower energy consumption is an inevitable need as AI evolves. To process data and calculate, the data is currently transferred between the CPU/GPU chips, as well as already the memory by electrical signals. Therefore, there is a growing need for optical communication and optical interconnections, which offer high speeds that do not decrease with the interconnection distance. Photoelectronic conversion technology is also gaining global interest as a very compact fusion of optical and electronic elements.
To address these challenges, TDK adapted its Magnetic Tunnel Junction (MTJ) technology, which is currently used in billions of HDD heads, for photonics. One of the main advantages of this technology is that it does not require glass growth using a single glass substrate, and the device can be formed independently of the substrate material. Comparatively, semiconductor -based conventional photographic detectors have physical lengths at shorter wavelengths. Because the Spin photo detector has a completely different operational principle and uses a phenomenon of electron heating, it can work at ultra -high speeds even when the wavelength is shortened. In addition, the operating wavelength range is wide, and it has been confirmed that it can work for visible light to near light. TDK has successfully demonstrated the Spin photo detector with the Nihon University in Japan, a research pioneer for the measurement of ultra -grape phenomena of magnetic material.
In addition, with the ability to detect visible light at high speeds, the Spin photo detector will be useful in projected applications for future growth, such as intelligent glasses AR/VR and high speed image sensors. While conventional semiconductor photosensation devices have a weak resistance of cosmic rays, MTJ elements are also known for their strong resistance of cosmic rays and is expected to be used as light detection elements in aerospace applications. In the future, according to these results, TDK will improve the perfection of the high -speed light detection element to follow its utility.
Glossary
- Ai: artificial intelligence
- Photoelectric conversion: A technology that combines optical and electronic elements
- Photographic conversion: A term coined by TDK that combines optical, electronic and magnetic elements
- HDD: Hard disk drive
- CPU: Central Processing Unit
- GPU: Graphics Processing Unit
- Spin: a fundamental property of particles, such as electrons, which describes an intrinsic type of rotation
- MTJ: Magnetic tunnel binding
- AR: Increased reality
- VR: Virtual reality
Main applications
- Photodetector for optical communication, optical interconnection for data centers and generative
- Photodetector for AR/VR
Main characteristics and benefits
- Optical detection is achieved using MTJ elements, which are magnetic elements, while conventional light detection elements are semiconductor elements
- Ultra Fast Light Detection
- Ultra fast light detection in a wide range of wavelength, from nearby infrared light to visible light
- It can be created on any board and a variety of devices
- It can be applied in fields such as data centers, optical communication and interconnection for generative and AR/VR
For more information, visit https://www.tdk.com/
